Kingston Hyper X DDR3 Memory Review
Memory is one of the easiest things that can be upgraded in a PC. However, there is more to upgrading memory than just removing the old and installing the new. A little research needs to be done to determine the best memory for the PC. There are a few factors that need to be considered. These factors are speed, timings, size, and depending on the motherboard, the channel capabilities. Speeds range from 1333 MHz up to 2400 MHz and capacities range from 2 gigabytes up to a whopping 64 gigabytes per kit. There are plenty of options out there for users looking to slap some more ram into their PCs. As we have changed the way we use our PCs, the memory requirements for our PCs have changed.
The amount of RAM available in a PC is crucial to a point. If you are trying to do memory intensive tasks with 2 gigabytes of RAM installed, the user may notice the PC is extremely slow. This is because as physical RAM capacity is exhausted Windows starts using Virtual Memory. Virtual memory is a file located on the drive or drives of your PC that acts as additional RAM. The major draw back is the virtual memory is extremely slow. You would also notice that the hard drive would be thrashing as well. Speeds are an important factor. Speed is what makes up the bandwidth of the ram, or how fast the throughput of the memory is.
Kingston has been a leader in the memory game for a while now. Kingston’s product line up ranges from basic memory all the way to super overclocked water cooled memory. Kingston has sent us over two of their mainstream enthusiast kits: the Kingston HyperX Predator 8 GB kit and the Kingston HyperX Beast 16 GB Kit.
[sc:sponsor sponsor=”Kingston” product_link=”http://www.kingston.com/us/memory/hyperx” product_name=”Kingston HyperX DDR3 Memory” ]
Specifications
| KHX18C9T2K2/8X | KHX21C11T3K2/16X |
| CL(IDD) 9 cycles | CL(IDD) 9 cycles |
| Row Cycle Time (tRCmin) 49.5ns (min.) | Row Cycle Time (tRCmin) 49.5ns (min.) |
| Refresh to Active/Refresh 160ns (min.) | Refresh to Active/Refresh 260ns (min.) |
| Command Time (tRFCmin): | Command Time (tRFCmin): |
| Row Active Time (tRASmin) 36ns (min.) | Row Active Time (tRASmin) 36ns (min.) |
| Maximum Operating Power 2.400 W* (per module) | Maximum Operating Power 2.460 W* (per module) |
| UL Rating 94 V – 0 | UL Rating 94 V – 0 |
| Operating Temperature 0o C to 85o C | Operating Temperature 0o C to 85o C |
| Storage Temperature -55o C to +100o C | Storage Temperature -55o C to +100o C |
| *Power will vary depending on the SDRAM used. | |
KHX18C9T2K2/8X
FEATURES
• JEDEC standard 1.5V (1.425V ~ 1.575V) Power Supply
• VDDQ = 1.5V (1.425V ~ 1.575V)
• 667MHz fCK for 1333Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 9, 8, 7, 6
• Programmable Additive Latency: 0, CL – 2, or CL – 1 clock
• Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
• Bi-directional Differential Data Strobe
• Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
• Asynchronous Reset
• PCB : Height 2.122” (53.90mm) w/ heatsink, double sided
component
KHX21C11T3K2/16X
FEATURES
• JEDEC standard 1.5V (1.425V ~ 1.575V) Power Supply
• VDDQ = 1.5V (1.425V ~ 1.575V)
• 667MHz fCK for 1333Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 9, 8, 7, 6
• Posted CAS
• Programmable Additive Latency: 0, CL – 2, or CL – 1 clock
• Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
• Bi-directional Differential Data Strobe
• Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
• Asynchronous Reset
• PCB : Height 1.827” (46.41mm) w/ heatsink, double sided
component
